PART |
Description |
Maker |
2SA1575 |
High fT. High breakdown voltage. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SC4548 |
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.
|
TY Semiconductor Co., Ltd
|
2SA1416 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压,大电流达林顿阵列 Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow High Voltage / High Current Darlington Transistor Arrays HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS (ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man... Electronic Theatre Controls, Inc. Sprague Electric ETC[ETC] List of Unclassifed Manufacturers VISHAY SPRAGUE
|
2SC4695 |
Adoption of FBET process. Small ON resistance [Ron=1W (IB=5mA)].
|
TY Semiconductor Co., Ltd
|
2SC4413 |
Adoption of FBET process. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
C10322D |
Flat panel sensor High sensitivity, high-speed frame rate, high resolution
|
Hamamatsu Corporation
|
KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
|
KEC Holdings KEC(Korea Electronics)
|
2SB1121 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., L...
|
2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|